Hot-Carrier Effects in MOS Devices
by Takeda; Yang; Miura-HamadaFormat: Hardcover
Pub. Date: 1995-11-20
Publisher(s): Elsevier Science
-
Free Shipping On Orders Over $35
Your order must be $35 or more to qualify for free economy shipping. Marketplace items, eBooks and apparel do not qualify towards the $35 purchase minimum.
-
Complimentary 7-Day eTextbook Access - Read more
When you rent or buy this book, you will receive complimentary 7-day online access to the eTextbook version from your PC, Mac, tablet, or smartphone. Feature not included on Marketplace Items. -
eCampus.com Device Compatibility Matrix
Click the device icon to install or view instructions
Apple iOS | iPad, iPhone, iPod
Android Devices | Android Tables & Phones OS 2.2 or higher | *Kindle Fire
Windows 10 / 8 / 7 / Vista / XP
Mac OS X | **iMac / MacbookEnjoy offline reading with these devicesiPad, iPhone, iPod
Android 2.2 +Kindle FireWindows
10 / 8 / 7 / Vista / XPMac
List Price: $72.95
Buy New
Usually Ships in 8 - 10 Business Days.
$72.88
Rent Textbook
Select for Price
Digital
$87.54*
Used Textbook
We're Sorry
Sold Out
How Marketplace Works:
- This item is offered by an independent seller and not shipped from our warehouse
- Item details like edition and cover design may differ from our description; see seller's comments before ordering.
- Sellers much confirm and ship within two business days; otherwise, the order will be cancelled and refunded.
- Marketplace purchases cannot be returned to eCampus.com. Contact the seller directly for inquiries; if no response within two days, contact customer service.
- Additional shipping costs apply to Marketplace purchases. Review shipping costs at checkout.
Summary
The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers.
Author Biography
Eiji Takeda: Hitachi Ltd., Tokyo, Japan Cary Y. Yang: Santa Clara University, California Akemi Miura-Hamada: Hitachi Ltd., Tokyo, Japan
Table of Contents
| Preface | p. xi |
| MOS Device Fundamentals | |
| From Discrete to ULSI | p. 1 |
| Physics of the MOS Diode | p. 2 |
| The Ideal MOS Diode | p. 3 |
| Energy Band Diagrams | p. 3 |
| Solution with the Depletion Approximation | p. 5 |
| Capacitance-Voltage Characteristics | p. 8 |
| General Solution | p. 11 |
| Nonideal Considerations | p. 15 |
| Voltage-Independent Flat-Band Shifts | p. 15 |
| Interface Trapped Charge | p. 17 |
| Nonuniform Substrate Doping | p. 22 |
| Principles of the MOSFET | p. 23 |
| Qualitative Description of MOSFET Operation | p. 23 |
| Bulk Charge Model | p. 26 |
| The Square Law | p. 28 |
| Threshold Voltage | p. 29 |
| Transconductance | p. 30 |
| Threshold Voltage Determination | p. 31 |
| Subthreshold Conduction | p. 32 |
| Short-Channel Effects | p. 34 |
| Mobility Degradation | p. 35 |
| Carrier Velocity Saturation | p. 37 |
| Survey of Device and Circuit Reliability Issues Related to Hot-Carrier Effects | p. 40 |
| Summary | p. 42 |
| Hot-Carrier Injection Mechanisms | |
| Introduction | p. 43 |
| Avalanche Breakdown | p. 44 |
| Avalanche Multiplication | p. 45 |
| Normal Breakdown | p. 47 |
| Negative-Resistance Breakdown | p. 48 |
| Hot-Carrier Injection Mechanisms and Gate Currents | p. 49 |
| Channel Hot-Electron (CHE) Injection | p. 49 |
| Drain Avalanche Hot-Carrier (DAHC) Injection | p. 51 |
| Secondarily Generated Hot-Electron (SGHE) Injection | p. 51 |
| Substrate Hot-Electron (SHE) Injection | p. 57 |
| Fowler-Nordheim (F-N) Tunnel Injection | p. 57 |
| Direct Tunnel Injection | p. 58 |
| Gate Current Modeling | p. 58 |
| Gate Current Resulting from CHE Injection (Effective Electron Temperature Model) | p. 58 |
| Gate Current Resulting from DAHC Injection | p. 60 |
| Effective Electron Temperature vs Lucky-Electron Model | p. 65 |
| Summary | p. 65 |
| Hot-Carrier Device Degradation | |
| Introduction | p. 66 |
| Device Degradation Due to Various Hot-Carrier Injections | p. 67 |
| Interface Trap Density (N[subscript it]) vs Degraded Length ([delta]L) | p. 68 |
| [Delta]G[subscript m]/G[subscript m0] vs [Delta]N[subscript it]/N[subscript it] Relation | p. 70 |
| Role of Hot Holes | p. 73 |
| DAHC vs CHE Injections | p. 76 |
| SGHE vs DAHC Injections | p. 78 |
| Modeling of Device Degradation | p. 80 |
| Substrate Current Modeling | p. 80 |
| Device Degradation Modeling--Hot-Carrier Lifetime | p. 81 |
| The Si-SiO[subscript 2] Interface Degradation | p. 88 |
| Summary | p. 90 |
| AC and Process-Induced Hot-Carrier Effects | |
| Introduction | p. 91 |
| Dynamic (AC) Stress Effects | p. 91 |
| Gate Pulse-Induced Noises | p. 92 |
| AC Hot-Carrier Degradation Due to Noises | p. 92 |
| AC Hot-Carrier Effects without Noises | p. 97 |
| Device Structure Dependence of AC Hot-Carrier Effects | p. 98 |
| Initial Stage Degradation | p. 103 |
| Process Effects on Hot-Carrier Degradation | p. 106 |
| Gate Oxide Degradation Due to Electron-Beam Direct Writing | p. 108 |
| Isolation Effects on Hot-Carrier Degradation | p. 110 |
| Materials Effects on Hot-Carrier Degradation | p. 110 |
| Mechanical Stress Effect | p. 113 |
| High-Quality Gate Dielectrics | p. 120 |
| Summary | p. 121 |
| Hot-Carrier Effects at Low Temperature and Low Voltage | |
| Introduction | p. 122 |
| Hot-Carrier Effects at Low Temperature | p. 123 |
| Device Performance Degradation | p. 123 |
| G[subscript m] Degradation | p. 123 |
| V[subscript th] Shift | p. 127 |
| Device Degradation Mechanisms | p. 130 |
| Summary | p. 133 |
| Dependence of Hot-Carrier Phenomena on Device Structure | |
| Introduction | p. 134 |
| Variations of Device Structure | p. 135 |
| Device Parameter Dependence | p. 135 |
| Effective Channel Length | p. 135 |
| Channel Dose | p. 135 |
| Gate Oxide Thickness | p. 137 |
| Gate to Drain-Source Overlapped Length | p. 138 |
| Device Structure Dependence | p. 140 |
| Drain Structures | p. 140 |
| Hot-Carrier-Resistant Characteristics (I[subscript SUB], I[subscript G]) | p. 142 |
| Summary | p. 145 |
| As-P Double Diffused Drain (DDD) Versus Lightly Doped Drain (LDD) Devices | |
| Introduction | p. 147 |
| DDD Structure and Its Fabrication Process | p. 149 |
| DDD Device Characteristics | p. 150 |
| I[subscript D]-V[subscript D] Characteristics | p. 150 |
| Drain Sustaining Voltage (BV[subscript DS]) | p. 153 |
| Short-Channel Effects--V[subscript th] Lowering | p. 153 |
| Tail Coefficient and V[subscript th] Scattering | p. 154 |
| Hot-Carrier Breakdown Voltage or Highest Applicable Voltage (BV[subscript DC]) | p. 157 |
| DDD and LDD Device Operation Principles | p. 159 |
| LDD Device Characteristics | p. 161 |
| Device Characteristics Specific to LDD Devices | p. 161 |
| Reduced Switchback Action Due to Source n[superscript -] Resistance | p. 162 |
| Improved LDD Devices | p. 165 |
| Gaussian vs Abrupt Junctions | p. 166 |
| V[subscript th] Lowering | p. 166 |
| G[subscript m] vs x[subscript j] Relation | p. 168 |
| Summary | p. 172 |
| Gate-to-Drain Overlapped Devices (GOLD) | |
| Introduction | p. 175 |
| GOLD Structure and Its Fabrication Process | p. 176 |
| Device Characteristics | p. 177 |
| G[subscript m] Improvement | p. 177 |
| Suppressed Avalanche-Induced Breakdown | p. 178 |
| Table of Contents provided by Syndetics. All Rights Reserved. |
An electronic version of this book is available through VitalSource.
This book is viewable on PC, Mac, iPhone, iPad, iPod Touch, and most smartphones.
By purchasing, you will be able to view this book online, as well as download it, for the chosen number of days.
Digital License
You are licensing a digital product for a set duration. Durations are set forth in the product description, with "Lifetime" typically meaning five (5) years of online access and permanent download to a supported device. All licenses are non-transferable.
More details can be found here.
A downloadable version of this book is available through the eCampus Reader or compatible Adobe readers.
Applications are available on iOS, Android, PC, Mac, and Windows Mobile platforms.
Please view the compatibility matrix prior to purchase.